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IPB016N06L3

Infineon
Part Number IPB016N06L3
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description Type IPB016N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimi...
Datasheet PDF File IPB016N06L3 PDF File

IPB016N06L3
IPB016N06L3

Overview
Type IPB016N06L3 G OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB016N06L3 G Product Summary V DS R DS(on),max ID 60 V 1.
6 mΩ 180 A Package Marking PG-TO-263-7 016N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25 °C2) T C=100 °C Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse4) E AS I D=100 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) Current is limited by bondwire; with an R thJC=0.
6 K/W the chip is able to carry 293 A.
3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Value 180 180 720 634 ±20 250 -55 .
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net page 1 Unit A mJ V W °C 2009-11-16 IPB016N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area5) min.
Values typ.
Unit max.
- - 0.
6 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=196 µA 1.
2 1.
7 2.
2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.
1 3 µA V DS=60 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V...


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