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IPB015N04N

Infineon
Part Number IPB015N04N
Manufacturer Infineon
Description Power Transistor
Published Oct 2, 2020
Detailed Description Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPB015N04N PDF File

IPB015N04N
IPB015N04N

Overview
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID Type IPB015N04N G IPP015N04N G IPP015N04N G IPB015N04N G 40 V 1.
5 mΩ 120 A Package Marking PG-TO263-3 015N04N PG-TO220-3 015N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current2) I D,pulse Avalanche current, single pulse3) I AS Avalanche energy, single pulse E AS Gate source voltage V GS 1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω Value Unit 120 A 120 400 100 865 mJ ±20 V www.
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net page 1 2009-11-16 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPP015N04N G IPB015N04N G Value Unit 250 W -55 .
.
.
175 °C 55/175/56 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - SMD version, device on PCB R thJA minimal footprint - 6 cm² cooling area4) - - 0.
6 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - Gate threshold voltage V GS(th) V DS=V GS, I D=200 µA 2 - Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.
1 -V 4 2 µA V DS=40 V, V GS=0 V, T j=125 °C - ...


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