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IPB039N04L

Infineon
Part Number IPB039N04L
Manufacturer Infineon
Description Power-Transistor
Published Sep 30, 2020
Detailed Description Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters •...
Datasheet PDF File IPB039N04L PDF File

IPB039N04L
IPB039N04L


Overview
Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID Type IPB039N04L G IPP039N04L G IPP039N04L G IPB039N04L G 40 V 3.
9 mΩ 80 A Package Marking PG-TO263-3 039N04L PG-TO220-3 039N04L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 V GS=4.
5 V, T C=25 °C I D,pulse I AS E AS V GS V GS=4.
5 V, T C=100 °C T C=25 °C T C=25 °C I D=80 A, R GS=25 Ω Rev.
1.
2 page 1 Value Unit 80 A 80 80 73 400 80 60 mJ ±20 V 2009-12-17 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPP039N04L G IPB039N04L G Value Unit 94 W -55 .
.
.
175 °C 55/175/56 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case R thJC - SMD version, device on PCB R thJA minimal footprint - 6 cm² cooling area4) - - 1.
6 K/W - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - Gate threshold voltage V GS(th) V DS=V GS, I D=45 µA 1.
2 - Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.
1 -V 2 1 µA V DS=40 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1...


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