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BD708

Part Number	BD708
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Power Transistor BD708 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -0.5A ·Collector-Emitter S...
Datasheet	BD708 PDF File

Overview

isc Silicon PNP Power Transistor BD708 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= -0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.
) ·Complement to Type BD707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCES Collector-Emitter Voltage VBE= 0 -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Juncti...

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