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BD711

Part Number	BD711
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor BD711 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Su...
Datasheet	BD711 PDF File

Overview

isc Silicon NPN Power Transistor BD711 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.
)@ IC= 0.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min.
)= ·Complement to Type BD712 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCES Collector-Emitter Voltage VBE= 0 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction...

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