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BD679A

Part Number	BD679A
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor BD679A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V ...
Datasheet	BD679A PDF File

Overview

isc Silicon NPN Darlington Power Transistor BD679A DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80V ·DC Current Gain— : hFE = 750(Min) @ IC= 2 A ·Complement to Type BD680A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP *Collector Current (Pulse) 6 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti ...

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