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BD652

Part Number	BD652
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(...
Datasheet	BD652 PDF File

Overview

isc Silicon PNP Darlington Power Transistor BD652 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD651 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power ...

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