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BD650

INCHANGE
Part Number BD650
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 30, 2020
Detailed Description isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·H...
Datasheet PDF File BD650 PDF File

BD650
BD650

Overview
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD649 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
3 A 2 W 62.
5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W BD650 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BD650 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA -2.
0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA -2.
5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -50mA -3.
0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.
5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 VCB= -60V; IE= 0; TC= 150℃ -0.
2 mA -2.
0 ICEO Collector Cutoff Current VCE= -50V; IB= 0 -0.
5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -3A ; VCE= -3V 750 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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