DatasheetsPDF.com

BD645

Part Number	BD645
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Hig...
Datasheet	BD645 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD646 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous Collector Power Dissipation PC ...

Similar Datasheet

BD601 (BD6xx) Silicon Power Transistor - ETC
BD60203EFV 2ch DC Brush Motor Driver - ROHM
BD6020GU Power supply - Rohm
BD6023AGU Power supply - Rohm
BD6025GU Power supply - Rohm
BD6026GU Power supply - Rohm
BD6028GU Power supply - Rohm
BD6030GSW Negative power supply - Rohm
BD6039GU Power Supply - Rohm
BD605 (BD6xx) Silicon Power Transistor - ETC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)