isc
Silicon NPN
Power Transistor
BD539D
DESCRIPTION ·DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·Complement to Type BD540D ·Minimum Lot-to-Lot variations for robust device
performance an...