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2SD1966

Part Number	2SD1966
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1966 DESCRIPTION ·High Collector-Emitter Breakdown Voltage-...
Datasheet	2SD1966 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1966 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.
7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.
5 A 5 W 150 ℃ Tstg Storage Temperature Rang...

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