DatasheetsPDF.com

2SD1481

Part Number	2SD1481
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 30, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION ·On-chip C-to-B Zener diode fo...
Datasheet	2SD1481 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1481 DESCRIPTION ·On-chip C-to-B Zener diode for surge voltage absorption ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 1A ·High DC Current Gain : hFE= 2000(Min) @IC= 1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency amplifiers and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50-70 V VCEO Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current-Continuous ICP Collector Current-Peak IB Bas...

Similar Datasheet

2SD1400 NPN Transistor - INCHANGE
2SD1401 NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR - Sanyo Semicon Device
2SD1402 NPN Transistor - INCHANGE
2SD1402 SILICON POWER TRANSISTOR - SavantIC
2SD1403 NPN Transistor - INCHANGE
2SD1403 NPN Triple Diffused Planar Silicon Transistor - Sanyo
2SD1403 SILICON POWER TRANSISTOR - SavantIC
2SD1404 Silicon NPN Power Transistor - INCHANGE
2SD1405 Silicon NPN Transistor - Toshiba
2SD1405 NPN Transistor - INCHANGE

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)