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2SD1279

Part Number	2SD1279
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1279 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Mi...
Datasheet	2SD1279 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1279 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 5.
0V(Max.
)@ IC= 8.
0A ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IB Base Current-Continuous PC Collector Pow...

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