DatasheetsPDF.com

2SD1175

Part Number	2SD1175
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1175 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SD1175 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1175 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 6.
0V(Max.
)@ IC= 5.
0A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC...

Similar Datasheet

2SD110 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD1101 NPN TRANSISTOR - Hitachi Semiconductor
2SD1101 Silicon NPN Transistor - Guangdong Kexin Industrial
2SD1101 Silicon NPN Transistor - Renesas
2SD1105 Silicon NPN Power Transistor - Inchange Semiconductor Company
2SD111 Silicon NPN Power Transistor - INCHANGE
2SD1110 NPN Transistor - INCHANGE
2SD1110 SILICON POWER TRANSISTOR - SavantIC
2SD1111 NPN TRANSISTOR - Sanyo Semicon Device
2SD1113 Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)