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2SD867

INCHANGE
Part Number 2SD867
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD867 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VC...
Datasheet PDF File 2SD867 PDF File

2SD867
2SD867


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD867 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 110V(Min).
·Excellent Safe Operating Area ·Low collector saturation voltage : VCE(sat)= 3.
0V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous 7 A PC Collector Power Dissipa...



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