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2SD836

Part Number	2SD836
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION ·High DC Current Gain- : hFE= 1...
Datasheet	2SD836 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.
)@IC= 2A ·High Switching Speed ·Complement to Type 2SB750 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AF power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 35 W 150 ℃ Tstg Storage Temperature Rang...

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