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2SD817

Part Number	2SD817
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD817 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min...
Datasheet	2SD817 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD817 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low collector saturation voltage ·Wide area of safe operation ·With TO-3 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for high voltage power switching TV horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature...

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