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2SD768

INCHANGE
Part Number 2SD768
Manufacturer INCHANGE
Published Sep 29, 2020
Description NPN Transistor
Detailed Description isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 DESCRIPTION ·High DC Current Gain- : hFE = 1...
Datasheet PDF File 2SD768 PDF File

2SD768
2SD768


Overview
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD768 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.
5V(Max)@ IC= 3A ·Complement to Type 2SB727 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 10 A 40 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD768 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 VCE(sat)-1★ Collector-Emitter Saturation Voltage IC= 3A, IB= 6mA VCE(sat)-2★ Collector-Emitter Saturation Voltage IC= 6A, IB= 60mA VBE(sat)-1★ Base-Emitter Saturation Voltage IC= 3A, IB= 6mA VBE(sat)-2★ Base-Emitter Saturation Voltage IC= 6A, IB= 60mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 ICEO Collector Cutoff Current VCE= 100V; RBE= ∞ hFE★ DC Current Gain ★:Pulse Test Switching Times ton Turn-On Time tf Fall Time IC= 3A; VCE= 3V IC = 3A, IB1 = IB2= 6mA; MIN TYP.
MAX UNIT 120 V 7 V 1.
5 V 3.
0 V 2.
0 V 3.
5 V 100 μA 10 μA 1000 20000 1.
0 μs 3.
0 μs isc website：www.
iscsemi.
com 2 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD768 NOTICE： ISC reserves the rights to make changes of the content herei...


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