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2SD226

Part Number	2SD226
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD226 DESCRIPTION ·Excellent Safe Operating Area ·Low Collect...
Datasheet	2SD226 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD226 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general-purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous 50 V 40 V 8 V 3 A ICM Collector Current-Peak 5 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature ...

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