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2SD198

Part Number	2SD198
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltag...
Datasheet	2SD198 PDF File

Overview

isc Silicon NPN Power Transistor isc Product Specification 2SD198 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Excellent Safe Operating Area ·Fast Switching Speed ·With TO-3 Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator.
·Switching mode power supply.
·Inverters .
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VALUE UNIT 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Juncti...

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