DatasheetsPDF.com

2SC6011

Part Number	2SC6011
Manufacturer	INCHANGE
Title	NPN Transistor
Description	·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement ...
Features	-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Coll...
Published	Sep 29, 2020
Datasheet	2SC6011 PDF File

Features

-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 4V COB ...

Similar Datasheet

2SC6010
Silicon NPN Transistor
(Toshiba)
2SC6011
Audio Amplification Transistor
(Allegro MicroSystems)
2SC6011
Audio Amplification Transistor
(Sanken)
2SC6011A
PNP PowerTransistor
(Sanken)
2SC6011A
Audio Amplification Transistor
(Allegro MicroSystems)
2SC6011A
NPN Transistor
(INCHANGE)
2SC6012
Silicon NPN triple diffusion Power Transistor
(Panasonic Semiconductor)
2SC6013
NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)