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2SC5887

Part Number	2SC5887
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet	2SC5887 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage ·Complement to Type 2SA2098 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 20 A IB Base Current-Continuous 3 A Total Power Dissipation @TC=25℃ ...

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