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2SC5802

Part Number	2SC5802
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5802 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SC5802 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5802 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN T...

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