NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5199
DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min) ·Complement to Type 2SA1942 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
2
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc Website：www.
iscsemi.
cn
1
isc & iscsemi isregistered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5199
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
160
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8.
0A; IB= 0.
8A
2.
5
V
VBE(on)
Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IC= 6A; VCE= 5V VCB= 160V; IE= 0
1.
5
V
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5
μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
35
COB
Output Capacitance
IE=0; VCB= 10V; ftest= 1.
0MHz
170
pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
isc Website：www.
iscsemi.
cn
2 isc & iscsemi isregistered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5199
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applicatio...
Similar Datasheet
