DatasheetsPDF.com

2SC5150

Part Number	2SC5150
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Sa...
Datasheet	2SC5150 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICP Collector Current-Pulse 20 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junctio...

Similar Datasheet

2SC510 SILICON NPN TRANSISTOR - Toshiba
2SC5100 NPN TRANSISTOR - Sanken electric
2SC5100 SILICON POWER TRANSISTOR - SavantIC
2SC5100 NPN Transistor - INCHANGE
2SC5101 NPN TRANSISTOR - Sanken electric
2SC5101 SILICON POWER TRANSISTOR - SavantIC
2SC5101 NPN Transistor - INCHANGE
2SC5103 High speed switching transistor - Rohm
2SC5103 NPN Transistor - INCHANGE
2SC5104 NPN Transistor - Panasonic Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)