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2SC5065

INCHANGE
Part Number 2SC5065
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 29, 2020
Detailed Description isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5065 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., ︱S...
Datasheet PDF File 2SC5065 PDF File

2SC5065
2SC5065

Overview
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC5065 DESCRIPTION ·Low Noise and High Gain NF = 1.
1 dB TYP.
, ︱S21e︱2= 12 dB TYP.
@VCE = 5 V, f = 1.
0 GHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF~UHF band low noise amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.
0 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 15 mA 0.
1 W 125 ℃ Tstg Storage Te...


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