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2SC4595

Part Number	2SC4595
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet	2SC4595 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4595 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 2V, IC= 2A) ·Low Saturation Voltage- : VCE(sat)= 0.
3V(Max)@ (IC= 6A, IB= 0.
3A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature ...

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