DatasheetsPDF.com

2SC4589

Part Number	2SC4589
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 29, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4589 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SC4589 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4589 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A IC(surge) Collector Current-Surge PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 50 W 150 ℃ Tst...

Similar Datasheet

2SC4500 NPN TRANSISTOR - Hitachi Semiconductor
2SC4500 Silicon NPN Transistor - Renesas
2SC4500L NPN TRANSISTOR - Hitachi Semiconductor
2SC4500L Silicon NPN Transistor - Renesas
2SC4500S NPN TRANSISTOR - Hitachi Semiconductor
2SC4500S Silicon NPN Transistor - Renesas
2SC4501 Silicon NPN Transistor - Hitachi Semiconductor
2SC4501 Silicon NPN Transistor - Renesas
2SC4501L Silicon NPN Transistor - Hitachi Semiconductor
2SC4501L Silicon NPN Transistor - Renesas

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)