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2SC4427

Part Number	2SC4427
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4427 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(...
Datasheet	2SC4427 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4427 DESCRIPTION ·High Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.
5 A ICP Collector Current-Pulse 15 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation ...

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