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2SC4385

INCHANGE
Part Number 2SC4385
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 28, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4385 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(...
Datasheet PDF File 2SC4385 PDF File

2SC4385
2SC4385


Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4385 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1670 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Ts...



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