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2SC4261

Part Number	2SC4261
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4261 DESCRIPTION ·Low Noise ·High Gain ·100% avalanche tested ...
Datasheet	2SC4261 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4261 DESCRIPTION ·Low Noise ·High Gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in UHF local oscillator.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.
0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.
1 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Tran...

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