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2SC3897

Part Number	2SC3897
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3897 DESCRIPTION ·High Breakdown Voltage ·High Switching Sp...
Datasheet	2SC3897 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3897 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 10 A ICM Collector Current- Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 25 A 70 W 150 ℃ Tstg S...

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