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2SC3419

Part Number	2SC3419
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419 DESCRIPTION ·Low Collector Saturation Voltage ·High po...
Datasheet	2SC3419 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3419 DESCRIPTION ·Low Collector Saturation Voltage ·High power dissipation ·Complementary to 2SA1356 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.
8 A 5.
0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc...

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