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2SC2682

Part Number	2SC2682
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2682 DESCRIPTION ·High voltage ·Low Saturation Voltage ·Com...
Datasheet	2SC2682 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2682 DESCRIPTION ·High voltage ·Low Saturation Voltage ·Complementary to 2SA1142 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2682 is designed for use in audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCER Collector-Emitter Voltage RBE=150Ω 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.
1 A 10 W -55~150 ℃...

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