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2SC1986

Part Number	2SC1986
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1986 DESCRIPTION ·Silicon NPN tripe diffused mesa ·Collecto...
Datasheet	2SC1986 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1986 DESCRIPTION ·Silicon NPN tripe diffused mesa ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 80(V)(Min.
) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General and industrial purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc &...

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