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2SC1826

Part Number	2SC1826
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 28, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1826 DESCRIPTION ·High breakdown voltage ·Large collector d...
Datasheet	2SC1826 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1826 DESCRIPTION ·High breakdown voltage ·Large collector dissipation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 30 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered tra...

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