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2SC1163

Part Number	2SC1163
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163 DESCRIPTION ·High Collector Current IC= 0.1A ·Collecto...
Datasheet	2SC1163 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC1163 DESCRIPTION ·High Collector Current IC= 0.
1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
1 A 20.
8 W 150 ℃ Tstg St...

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