isc
Silicon PNP Darlington
Power Transistor
INCHANGE Semiconductor
2SB668
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain
: hFE= 2000(Min) @IC= -0.5A ·Low Saturation
Voltage ·Minimum Lot-to-Lot variati...