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2SA2004

Part Number	2SA2004
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004 DESCRIPTION ·Silicon PNP epitaxial planner type ·100% ...
Datasheet	2SA2004 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA2004 DESCRIPTION ·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.
iscsemi.
com isc & iscsemi is registered trademark NCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2004 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA; IB=...

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