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2SA779

Part Number	2SA779
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining...
Datasheet	2SA779 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.
15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -35V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -35 VCEO Collector-Emitter Voltage -35 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.
5 IB Base Current-Continuous -0.
5 Collector Power Dissipation @ Ta=25℃ 1.
0 PC Collector Power Dissipation @ TC=25℃ 10 TJ Junctio...

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