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2N6036

Part Number	2N6036
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 DESCRIPTION ·Collector–Emitter Sustaining V...
Datasheet	2N6036 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2N6036 DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = -80V(Min.
) ·DC Current Gain— : hFE = 750(Min) @ IC= -2A ·Complement to Type 2N6039 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -8 IB Base Current -0.
1 PC Collector Power Dissipation TC=25℃ ...

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