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MJW16018

INCHANGE
Part Number MJW16018
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 27, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switc...
Datasheet PDF File MJW16018 PDF File

MJW16018
MJW16018


Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical.
They are particularly suited for line operated switch-mode applications.
Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 8 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
0 UNIT ℃/W MJW16018 isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A IC= 5A; IB= 2A,TC=100℃ VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 5A; IB= 2A IC= 5A; IB= 2A,TC=100℃ VCBO=1500V;IE=0 VCBO=1500V;IE=0;TC=100℃ IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 5A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest=1.
0kHz Pulsed Test: Pulse duration = 300 ms, duty cycle ≤ 2% Switching Times td Delay Time tr Rise Time ts Storage Time tf Fall Time IC= 5A ;IB1=-IB2= 2A; VCC= 250V MJW16018 MIN TYP.
MAX UNIT 8...


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