MJL21193 Datasheet

MJL21193 PNP Transistor

·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21194 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Perforated Emitter technology high power audio output, disk.

Features

X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -250 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -1.4 V VCE(sat Collector-Emitter Saturation Voltage IC= -16A; IB= -3.2A -4.0 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -2.2 V ICEO Collector Cutoff Current VCE= -200V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -8A; VCE= -5V 25 75 hFE-2 DC Current Gain IC= -16A; VCE= -5V 8 COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 500 pF fT Current-Gain—Bandwidth Pro.