PNP Transistor - INCHANGE
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V(Min) ·High DC current gain -
: hFE = 40 (Min) @IC= 3.
0 A : hFE = 20 (Min) @IC= 4.
0 A ·Complement to Type MJF15030 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-16
A
IB
Base Current
Collector Power Dissipation
PC
@Ta=25℃ Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
-2
A
2 W
36
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.
5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W
MJF15031
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iscsemi.
com
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isc Silicon PNP Power Transistor
MJF15031
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.
1A
VBE(on) Base-Emitter On Voltage
IC= -1A ; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
ICEO
Collector Cutoff Current
VCE= -150V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.
1A ; VCE= -2V
hFE-2
DC Current Gain
IC= -2A ; VCE= -2V
hFE-3
DC Current Gain
IC= -3A ; VCE= -2V
hFE-4
DC Current Gain
IC= -4A ; VCE= -2V
fT
Current Gain-Bandwidth Product
IC= -0.
5A;VCE= -10V; ftest= 10MHz
MIN MAX UNIT
-150
V
-0.
5
V
-1.
0
V
-10
μA
-100 μA
-10
μA
40
40
40
20
20
MHz
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