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MJE5730

INCHANGE
Part Number MJE5730
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 27, 2020
Detailed Description isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -300V(Min) ·DC current...
Datasheet PDF File MJE5730 PDF File

MJE5730
MJE5730

Overview
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -300V(Min) ·DC current gain - : hFE = 30~150@ IC= -0.
3A ·With TO-220 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,switchmode power supply drivers and other switching applications ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB Base Current Collector Power Dissipation PC @Ta=25℃ Collector Power Dissipation @TC=25℃ Tj Junction Temperature -1 A 2 W 40 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.
125 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.
5 ℃/W MJE5730 isc Website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE5730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 -300 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -0.
2A -1.
0 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V -1.
5 V ICBO Collector Cutoff Current VCB= -300V; IE= 0 -1.
0 mA ICEO Collector Cutoff Current VCE= -300V; IB= 0 -1.
0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1.
0 mA hFE-1 DC Current Gain IC= -0.
3A ; VCE= -10V 30 150 hFE-2 DC Current Gain IC= -1A ; VCE= -10V 10 fT Current Gain-Bandwidth Product IC= -0.
2A;VCE= -10V; ftest= 2.
0MHz 10 Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤2%.
MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
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