DatasheetsPDF.com

MJE701

Part Number	MJE701
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Cu...
Datasheet	MJE701 PDF File

Overview

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A = 100(Min) @ IC= -4A ·Complement to Type MJE801 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature -0.
1 A 40...

Similar Datasheet

MJE700 PNP Transistor - INCHANGE
MJE700 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE700 DARLINGTON POWER TRANSISTORS - ON
MJE700 PNP Epitaxial Silicon Darlington Transistor - Fairchild
MJE700 COMPLEMENTARY POWER DARLINGTON TRANSISTORS - Central Semiconductor
MJE700G Plastic Darlington Complementary Silicon Power Transistors - ON Semiconductor
MJE700T 4.0 AMPERE DARLINGTON POWER TRANSISTORS - Motorola
MJE700T POWER TRANSISTOR - Central Semiconductor
MJE700T PNP Transistor - INCHANGE
MJE701 PNP Epitaxial Silicon Darlington Transistor - Fairchild

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)