DatasheetsPDF.com

3DD15D

Part Number	3DD15D
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Power Transistor 3DD15D DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC C...
Datasheet	3DD15D PDF File

Overview

isc Silicon NPN Power Transistor 3DD15D DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.
) ·DC Current Gain- : hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Ju...

Similar Datasheet

3DD10 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD100A NPN Transistor - INCHANGE
3DD100B NPN Transistor - INCHANGE
3DD100C NPN Transistor - INCHANGE
3DD100D NPN Transistor - INCHANGE
3DD100E NPN Transistor - INCHANGE
3DD101 NPN Silicon Low Frequency High Power Transistor - Shaanxi Qunli Electric
3DD101A Power Transistor - SJ
3DD101A Silicon NPN Power Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)