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2SB1345

Part Number	2SB1345
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A ·Good L...
Datasheet	2SB1345 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.
0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SD2062 ·With TO-3PN package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1345 isc website： ...

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