Part Number | 2SB1258 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1000(Min)@IC= -3A ·Complement to Type 2SD1785 ·Minimum ... |
Features |
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0
-100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
-1.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
-2.0
V
IC...
|
Published | Sep 27, 2020 |
Datasheet | 2SB1258 PDF File |