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2N6355

Part Number	2N6355
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 27, 2020
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 packag...
Datasheet	2N6355 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low -frequency swithing applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 20 A IB Base Current-Continuous 0.
5 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg St...

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